MBE growth of nitride-arsenide materials for long wavelength optoelectronics

Materials Research Society Symposium - Proceedings

Volumn 595, Issue , 2000, Pages

  Spruytte, Sylvia G ^a   Coldren, Christopher W ^a   Marshall, Ann F ^a   Larson, Michael C ^a   Harris, James S ^a  

^a STANFORD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL BONDS; CRYSTAL STRUCTURE; EMISSION SPECTROSCOPY; LATTICE CONSTANTS; OPTOELECTRONIC DEVICES; PLASMA APPLICATIONS; PROBES; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR MATERIALS; X RAY PHOTOELECTRON SPECTROSCOPY;

ELECTRON MICROPROBE; HIGH RESOLUTION X RAY DIFFRACTION; NITROGEN STICKING CONCENTRATION;

MOLECULAR BEAM EPITAXY;

EID: 0033720128     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)