Strain-compensated InGaAs/InAlAs/InP pre-biased quantum well for polarization-insensitive and negative-chirp electro-absorption optical modulators

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2000, Pages 404-407

  Kato, Masaki ^a   Nakano, Yoshiaki ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRO-ABSORPTION OPTICAL MODULATORS; INDIUM ALUMINUM ARSENIDE;

BAND STRUCTURE; ELECTRIC FIELD EFFECTS; ELECTROOPTICAL DEVICES; INSERTION LOSSES; LIGHT MODULATORS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE STRUCTURES;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0033719470     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (6)

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