SCOPUS 정보 검색 플랫폼

Journal of Electronic Materials

Volumn 29, Issue 6, 2000, Pages 718-722

Wurtzite CdS on CdTe grown by molecular beam epitaxy

(5) Boieriu, P a Sporken, R a,b Xin, Yan a Browning, N D a Sivananthan, S a

a UNIVERSITY OF ILLINOIS AT CHICAGO (United States)

b UNIVERSITY OF NAMUR (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; HETEROJUNCTIONS; INDIUM; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; MORPHOLOGY; NUCLEATION; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SINGLE CRYSTALS; STOICHIOMETRY;

CADMIUM SULFIDE; WURTZITE;

SEMICONDUCTING CADMIUM TELLURIDE;

EID: 0033719407 PISSN: 03615235 EISSN: None Source Type: Journal
DOI: 10.1007/s11664-000-0212-3 Document Type: Article

Times cited : (34)

References (10)

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9
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- to be published
- P. Boieriu, R. Sporken, Y. Xin, N.D. Browning, A. Subrahmanyan, and S. Sivananthan, to be published.
- Boieriu, P.¹ Sporken, R.² Xin, Y.³ Browning, N.D.⁴ Subrahmanyan, A.⁵ Sivananthan, S.⁶

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.