Structural studies of 20 keV oxygen-implanted silicon

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 168, Issue 4, 2000, Pages 503-509

  Gupta, G K ^a   Yadav, A D ^a   Gundu Rao, T K ^b   Dubey, S K ^a  

^a UNIVERSITY OF MUMBAI   (India)

^b INDIAN INSTITUTE OF TECHNOLOGY BOMBAY   (India)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CAPACITANCE MEASUREMENT; ELECTRON SPIN RESONANCE SPECTROSCOPY; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HIGH TEMPERATURE EFFECTS; ION BEAMS; ION IMPLANTATION; OXYGEN; SILICA; SYNTHESIS (CHEMICAL); VOLTAGE MEASUREMENT;

CAPACITANCE-VOLTAGE CHARACTERISTICS;

SILICON WAFERS;

EID: 0033718763     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(00)00065-3     Document Type: Article

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