Study of velocity field characteristics in pseudomorphic Si0.8Ge0.2 p-channel metal-oxide-semiconductor field effect transistor

Microelectronic Engineering

Volumn 51, Issue , 2000, Pages 541-546

  Ansaripour, G ^a   Braithwaite, G ^a   Agan, S ^a   Whall, T E ^a   Parker, E H C ^a  

^a UNIVERSITY OF WARWICK   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; ELECTRIC FIELDS; ELECTRON TRANSPORT PROPERTIES; MATHEMATICAL MODELS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; VELOCITY;

HOLE TRANSPORT CHARACTERISTICS; VELOCITY FIELD CHARACTERISTICS;

MOSFET DEVICES;

EID: 0033718720     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(99)00516-X     Document Type: Article

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