Physically-based effective width modeling of MOSFETs and diffused resistors

IEEE International Conference on Microelectronic Test Structures

Volumn , Issue , 2000, Pages 169-174

  McAndrew, Colin C ^a   Sekine, Satoshi ^a   Cassagnes, Alexandra ^a   Wu, Zhicheng ^a  

^a MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; DIFFUSION IN SOLIDS; MATHEMATICAL MODELS; RESISTORS; SEMICONDUCTOR DOPING;

DIFFUSED RESISTORS; EFFECTIVE WIDTH MODELS; FINITE DOPANT SOURCE EFFECT;

MOSFET DEVICES;

EID: 0033718062     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)