High-resolution two-dimensional dopant characterization using secondary ion mass spectrometry

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 18, Issue 1, 2000, Pages 580-585

  Ukraintsev, V A ^a   Chen, P J ^a   Gray, J T ^a   Machala, C F ^a   Magel, L K ^a   Chang, M C ^a  

^a TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; DATA ACQUISITION; ETCHING; ION IMPLANTATION; MONTE CARLO METHODS; PHOTORESISTS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING BORON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING;

DOPANT DISTRIBUTION DECONVOLUTION; TRENCH ETCHING;

SURFACE CHEMISTRY;

EID: 0033717802     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.591236     Document Type: Article

References (5)

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4. M. G. Dowsett and G. A. Cooke, J. Vac. Sci. Technol. B 10, 353 (1992); G. A. Cooke, M. G. Dowsett, C. Hill, P. J. Pearson, and A. J. Walton, ibid. 12, 243 (1994).
5. TSUPREM4 User's Manual, TMA, 595 Lawrence Expressway, Sunnyvale, CA.