Sub-0.1 μm CMOS with source/drain extension spacer formed using nitrogen implantation prior to thick gate re-oxidation

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2000, Pages 188-189

  Hu, J C ^a   Chatterjee, A ^a   Mehrotra, M ^a   Xu, J ^a   Shiau, W T ^a   Rodder, M ^a  

^a TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

NITROGEN; OXIDATION;

GATE REOXIDATION;

CMOS INTEGRATED CIRCUITS;

EID: 0033715425     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)