Growth and characterization of N-doped SiC films from trimethylsilane

Materials Science Forum

Volumn 338, Issue , 2000, Pages

  Chen, J ^a   Steckl, A J ^a,b   Loboda, M J ^b  

^a University of Cincinnati   (United States)

^b DOW CORNING CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CARRIER MOBILITY; FILM GROWTH; HALL EFFECT; NITROGEN; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SILANES; SUBSTRATES; VAPOR PHASE EPITAXY; X RAY CRYSTALLOGRAPHY;

TRIMETHYLSILANE;

SILICON CARBIDE;

EID: 0033715397     PISSN: 02555476     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

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