Recombination center in C60/p-Si heterojunction and solar cells

Solid-State Electronics

Volumn 44, Issue 8, 2000, Pages 1471-1475

  Khan, Aurangzeb ^a   Yamaguchi, Masafumi ^a   Kojima, N ^a  

^a TOYOTA TECHNOLOGICAL INSTITUTE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DEEP LEVEL TRANSIENT SPECTROSCOPY; DIFFUSION IN SOLIDS; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY;

MINORITY CARRIER DIFFUSION LENGTH;

SILICON SOLAR CELLS;

EID: 0033715042     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(00)00062-9     Document Type: Article

References (4)

1. Kojima N, Ishikawa N, Yang MJ, Yamaguchi M. In: Proceedings of the Second World Conference on Photovoltaic Energy Conversion. Wien, Austria, July 6-10, 1998. p. 246.
2. Kita K., Wen C., Ihara M., Yamada K. J Appl Phys. 79:1996;2798.
3. Chen K.M., Jia Y.Q., Jin S.X., Wu K., Zhao W.B., Li C.Y., Gu Z.N., Zhou X.H. J Phys Conds Matter. 7:1995;L201.
4. Henry C.H., Lang D.V. Phys Rev B. 15:1977;989.