Analytical approach for thermal and electrical design of multilayer structure integrated devices

Electronics Letters

Volumn 36, Issue 13, 2000, Pages 1120-1121

  Pesare, M ^a   Giorgio, A ^a   Perri, A G ^a  

^a POLITECNICO DI BARI   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

BOUNDARY CONDITIONS; CURRENT VOLTAGE CHARACTERISTICS; FOURIER TRANSFORMS; GREEN'S FUNCTION; LINEAR EQUATIONS; MATHEMATICAL MODELS; MULTILAYERS; PARTIAL DIFFERENTIAL EQUATIONS; SEMICONDUCTING GALLIUM ARSENIDE; THERMAL CONDUCTIVITY; THERMAL EFFECTS;

ELECTROTHERMAL DESIGN; HEAT EQUATION; INTEGRATED DEVICES;

MESFET DEVICES;

EID: 0033714671     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20000805     Document Type: Article

References (3)

1. LEE, C.C., MIN, Y.J., and PALISOC, A.L.: 'A general integration algorithm for the inverse Fourier transform of four-layer infinite plate structures', IEEE Trans., 1989, CPMT-12, pp. 710-716
2. BONANI, F., and GHIONE, G.: 'On the application of the Kirchhoff transformation to the steady-state thermal analysis of semiconductor devices with temperature-dependent and piecewise inhomogeneous thermal conductivity', Solid-State Electron., 1995, 38, pp. 1409-1412
3. CHANG, C.S., and DAY, D.Y.S.: 'Analytic theory for current-voltage characteristics and field distribution of GaAs MESFETs', IEEE Trans., 1989, ED-36, pp. 269-280