X-ray and tem studies of short-range order in All. In. As thin films

Materials Research Society Symposium - Proceedings

Volumn 583, Issue , 2000, Pages 179-187

  Ulik, Joseph K ^a   Forrest, Rebecca ^a   Jianhua, L I ^b   Golding, Terry ^b   Moss, Simon C ^c   Jianming, B A I ^c  

^a University of Houston   (United States)

^b UNIVERSITY OF HOUSTON   (United States)

^c UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; COPPER ALLOYS; CRYSTAL SYMMETRY; FILM GROWTH; MOLECULAR BEAM EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; STACKING FAULTS; SURFACE STRUCTURE; TRANSMISSION ELECTRON MICROSCOPY; X RAY SCATTERING;

ALUMINUM INDIUM ARSENIDE; ATOMIC DISPLACEMENT; COPPER PLATINUM ALLOYS; SURFACE RECONSTRUCTION;

THIN FILMS;

EID: 0033714096     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (20)

1. A. Zunger and S. Mahajan, in Handbook on Semiconductors, edited by T. S. Moss (Elsevier Science B. V., Amsterdam, 1994), p. 1399.
2. S. B. Zhang, S. Froyen, and A. Zunger, in Materials Research Society Symposium Proceedings, Optoelectronic Materials: Ordering, Composition Modulation, and Self-Assembled Structures, edited by E. D. Jones, A. Mascarenhas, and P. Petroff (MRS, Pittsburgh, Pa., 1996), Vol. 417, p. 43.
3. B. A. Philips, A. G. Norman, T. Y. Seong, S. Mahajan, G. R. Booker, M. Skowronski, J. P. Harbison, and V. G. Keramidas, J. Cryst. Growth 140, 249 (1994).
4. A. Gomyo, T. Suzuki, and S. lijima, Phys. Rev. Lett. 60,2645 (1988).
5. 1. J. Murgatroyd, A. G. Norman, and G. R. Booker, J. Appl. Phys. 67, 2310 (1990).
6. A. G. Norman, R. E. Mallard, I. J. Murgatroyd, G. R. Booker, A. H. Moore, and M. D. Scott, Inst. Phys. Conf. Ser. 87, 77 (1987).
7. O. Ueda, T. Fujii, Y. Nakada, H. Yamada, and I. Umebu, J. Cryst. Growth 95, 38 (1989).
8. T. Suzuki, T. Ichihashi, and T. Nakayama, Appl. Phys. Lett. 73, 2588 (1998).
9. A. Gomyo, K. Makita, I. Hino, and T. Suzuki, Phys. Rev. Lett. 72, 673 (1994).
10. A. Gomyo, K. Makita, I. Hino, and T. Suzuki, J. Cryst. Growth 150, 533 (1995).
11. R. L. Forrest, T. D. Golding, S. C. Moss, Z. Zhang, J. F. Geisz, J. M. Olson, A. Mascarenhas, P. Ernst, and C. Geng, Phys. Rev. B 58, 15355 (1998).
12. M. M. Sung and J. W. Rabalais, Surf. Sci. 356, 161 (1996).
13. R. L. Forrest, J. Kulik, T. D. Golding, and S. C. Moss, to appear in J. Mat. Res., (Jan. 2000).
14. V. Swaminathan and A. T. Macrander, Materials Aspects ofGaAs and InP Based Structures (Prentice Hall, Englewood Cliffs, NJ, 1991), pp. 22-23, 26, 30.
15. B. E. Warren, X-ray Diffraction (Dover Publications, New York, 1990), pp. 18,38,241,275.
16. C. S. Baxter, W. M. Stobbs, and J. H. Wilkie, J. Cryst. Growth 112, 373 (1991).
17. C. S. Baxter, W. M. Stobbs, R. F. Broom, and J. P. Reithmaier, J. Cryst. Growth 131, 419 (1993).
18. A. Gomyo, M. Sumino, I. Hino, and T. Suzuki, Jpn. J. Appl. Phys. 34, L469 (1995).
19. E. Morita, M. Ikeda, O. Kumagai, and K. Kaneko, Appl. Phys. Lett. 53,2164 (1988).
20. A. Mascarenhas, private communication.