Scanning tunneling microscope study of diamond films for electron field emission

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 18, Issue 1, 2000, Pages 76-81

  Rakhimov, A T ^a   Suetin, N V ^a   Soldatov, E S ^a   Timofeyev, M A ^a   Trifonov, A S ^a   Khanin, V V ^a   Silzars, A ^a,b,c  

^a MOSCOW STATE UNIVERSITY   (Russian Federation)

^b SARNOFF CORPORATION   (United States)

^c Northlight Displays   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRON EMISSION; ELECTRON TUNNELING; FILM GROWTH; NANOSTRUCTURED MATERIALS; SCANNING TUNNELING MICROSCOPY; SURFACE TOPOGRAPHY;

EMISSION SITE DENSITY;

DIAMOND FILMS;

EID: 0033713513     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.591154     Document Type: Article

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