Di-interstitial diffusivity and migration path calculations based on tight-binding Hamiltonian molecular dynamics

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Volumn , Issue , 2000, Pages 119-122

  Hane, Masami ^a   Ikezawa, Takeo ^a   Gilmer, George H ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CRYSTALLINE MATERIALS; DIFFUSION IN SOLIDS; ELECTRON ENERGY LEVELS; MOLECULAR DYNAMICS; POINT DEFECTS; SEMICONDUCTOR DOPING;

DI-INTERSTITIAL DIFFUSIVITY; TIGHT-BINDING HAMILTONIAN MOLECULAR DYNAMICS;

SEMICONDUCTING SILICON;

EID: 0033713306     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (14)