Capacitive accelerometer with high aspect ratio single crystalline silicon microstructure using the SOI structure with polysilicon-based interconnect technique

Proceedings of the IEEE Micro Electro Mechanical Systems (MEMS)

Volumn , Issue , 2000, Pages 514-519

  Yamamoto, T ^a   Kato, N ^a   Matsui, M ^a   Takeuchi, Y ^a   Otsuka, Y ^a   Akita, S ^a  

^a DENSO CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACCELEROMETERS; ANNEALING; MICROSENSORS; POLYCRYSTALLINE MATERIALS; SILICON ON INSULATOR TECHNOLOGY;

CAPACITIVE ACCELEROMETERS;

MICROELECTROMECHANICAL DEVICES;

EID: 0033708073     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (2)