On nature of centers responsible for inherent memory in ZnS:Mn thin-film electroluminescent devices

Journal of Crystal Growth

Volumn 216, Issue 1, 2000, Pages 249-255

  Vlasenko, N A ^a   Chumachkova, M M ^a   Denisova, Z L ^a   Veligura, L I ^a  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL LATTICES; ELECTRIC POTENTIAL; ELECTROLUMINESCENCE; HYSTERESIS; IMPACT IONIZATION; MANGANESE; PHOTOCHEMICAL REACTIONS; SEMICONDUCTING FILMS; SEMICONDUCTING ZINC COMPOUNDS; ZINC SULFIDE;

INHERENT MEMORY;

LUMINESCENT DEVICES;

EID: 0033708045     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(00)00436-X     Document Type: Article

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