Edge-illuminated refracting-facet photodiode with large bandwidth and high output voltage

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 4 B, 2000, Pages 2360-2363

  Fukano, Hideki ^a   Muramoto, Yoshifumi ^a   Matsuoka, Yutaka ^a  

^a NTT CORPORATION   (Japan)

Author keywords

Edge illuminated; InGaAs; InP; PD; Photodiode; Refracting

Indexed keywords

CARRIER CONCENTRATION; ELECTRIC SPACE CHARGE; LIGHT ABSORPTION; OPTICAL VARIABLES MEASUREMENT; REFRACTIVE INDEX; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE;

EDGE ILLUMINATED REFRACTING FACET PHOTODIODE; INDIUM GALLIUM ARSENIDE; LIGHT PENETRATION;

PHOTODIODES;

EID: 0033708034     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.2360     Document Type: Article

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