Quenching mechanism of luminescence in Sm-doped ZnS

Journal of Crystal Growth

Volumn 214, Issue , 2000, Pages 954-957

  Maruyama, Takahiro ^a   Yamada, Hisashi ^a   Mochizuki, Takashi ^a   Akimoto, Katsuhiro ^a   Yagi, Eiichi ^a,b  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b INST OF PHYS AND CHEMICAL RESEARCH   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL LATTICES; PHOTOLUMINESCENCE; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SAMARIUM; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR DOPING; SINGLE CRYSTALS;

QUENCHING MECHANISM; RED LUMINESCENCE; WIDE BAND GAP;

MOLECULAR BEAM EPITAXY;

EID: 0033706478     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(00)00265-7     Document Type: Article

References (4)

1. M. Tanaka G. Nishimura T. Kushida Phys. Rev. B 49 1994 16917
2. T. Honma K. Toda Z.-G. Ye M. Sato J. Phys. Chem. Solid. 59 1998 1187
3. H. Yamada, T. Maruyama, K. Akimoto, Proceedings of the Second International Symposium on Blue Laser and Light Emitting Diodes, Chiba, Japan, September 1998, Ohmsha, Ltd.
4. H. Yamada, M. Tanaka, T. Mochizuki, T. Maruyama, K. Akimoto, T. Yao, in: Proceedings of the Ninth International Conference on II–VI Compounds, Kyoto, Japan, November 1999, in press.