On Hall effect and thermoelectrical properties of (FeNiCo)x-(SiO2)1 - X nanocomposite thin films

Journal of Magnetism and Magnetic Materials

Volumn 215-216, Issue , 2000, Pages 535-538

  Chiriac, H ^a   Lozovan, M ^a   Urse, M ^a  

^a NATIONAL INSTITUTE OF RESEARCH AND DEVELOPMENT FOR TECHNICAL PHYSICS   (Romania)

Author keywords

Electrical resistance; Hall effect; Thermoelectric force; Thin films

Indexed keywords

ELECTRIC PROPERTIES; ELECTRIC RESISTANCE MEASUREMENT; HALL EFFECT; NANOSTRUCTURED MATERIALS; PERCOLATION (SOLID STATE); SENSITIVITY ANALYSIS; STRUCTURE (COMPOSITION); THERMAL EFFECTS; THERMOELECTRICITY; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

MAGNETIC SENSORS; NANOCOMPOSITE THIN FILMS; PERCOLATION THRESHOLD; THERMOELECTRIC FORCE; THERMOELECTRICAL PROPERTIES;

MAGNETIC THIN FILMS;

EID: 0033706279     PISSN: 03048853     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0304-8853(00)00212-2     Document Type: Article

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