Electrochemical atomic-layer epitaxy: electrodeposition of III-V and II-VI compound semiconductors

Materials Research Society Symposium - Proceedings

Volumn 581, Issue , 2000, Pages 145-150

  Wade, Travis L ^a   Flowers Jr , Billy H ^a   Vaidyanathan, Raman ^a   Mathe, Kenneth ^a   Maddox, Clinton B ^a   Happek, Uwe ^a   Stickney, John L ^a  

^a UNIVERSITY OF GEORGIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELLIPSOMETRY; EPITAXIAL GROWTH; PROBES; SEMICONDUCTING CADMIUM TELLURIDE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

CADMIUM SELENIDE; CADMIUM SULFIDE; ELECTROCHEMICAL ATOMIC LAYER EPITAXY; ELECTRON MICROPROBE ANALYSIS; INDIUM ANTIMONIDE; INDIUM ARSENIDE; INFRARED REFLECTION ABSORPTION;

ELECTRODEPOSITION;

EID: 0033705932     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (38)