Thermal stability and interfacial reaction of barrier layers with low-dielectric-constant fluorinated carbon interlayer

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 39, Issue 6 A, 2000, Pages

  Hara, Tohru ^a   Sakamoto, Keiichi ^a   Togoh, Fumiaki ^a   Yang, Hongning ^b   Evans, David R ^b  

^a HOSEI UNIVERSITY   (Japan)

^b SHARP LABORATORIES OF AMERICA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DIELECTRIC FILMS; DIFFUSION IN SOLIDS; FLUOROCARBONS; INTERFACES (MATERIALS); PERMITTIVITY; POLYCRYSTALLINE MATERIALS; SINGLE CRYSTALS; TANTALUM COMPOUNDS; THERMAL EFFECTS; THERMODYNAMIC STABILITY; TITANIUM NITRIDE;

BARRIER LAYERS; TANTALUM NITRIDE;

ULSI CIRCUITS;

EID: 0033705746     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.l506     Document Type: Article

References (9)