Performance improvement of CdZnTe detectors using modified two-terminal electrode geometry

Journal of Crystal Growth

Volumn 214, Issue , 2000, Pages 1152-1154

  Parnham, K ^a   Glick, J B ^a   Szeles, Cs ^a   Lynn, K G ^b  

^a II VI Inc   (United States)

^b WASHINGTON STATE UNIVERSITY   (United States)

Author keywords

CAPtureTMtechnology; CdZnTe; Gamma ray detector; Modified electric field

Indexed keywords

AMPLIFIERS (ELECTRONIC); ANODES; CATHODES; ELECTRON ENERGY LEVELS; GAMMA RAYS; PHOTONS; SEMICONDUCTING CADMIUM COMPOUNDS;

EXTENDED SURFACE CATHODE; PLANAR ANODE; SINGLE CHANNEL PREAMPLIFIER SHAPING AMPLIFIER SYSTEM;

PARTICLE DETECTORS;

EID: 0033705744     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(00)00293-1     Document Type: Article

References (8)

1. R.B. James, T.E. Schlesinger, J. Lund, M. Schieber, in: Semiconductors and Semimetals, Vol. 43, Academic Press, New York, 1997, p. 335.
2. P.N. Luke IEEE Trans. Nucl. Sci. NS-42 1995 207
3. D.S. McGregor Z. He H.A. Siefert D.K. Wehe R.A. Rojeski Appl. Phys. Lett 72 1998 427
4. D.S. Mcgregor R.A. Rojeski Z. He D.K. Wehe M.C. Driver M. Blakely Nucl. Instr. and Meth. A 422 1999 164
5. T.H. Prettyman Nucl. Instr. and Meth. A 428 1999 72
6. R. Arlt V. Gryshchuk P. Sumah Nucl. Instr. and Meth. A 428 1999 127
7. U.S. Patent # 5,677,539, Semiconductor radiation detector with enhanced charge collection, October 1997.
8. A.K. Khusainov, M.P. Zhukov, A.P. Krylov, V.F. Morozov, W.D. Ruhter, D. Clark, A. Lavietes, R. Arlt, High resolution PIN-type CdTe detectors for the verification of nuclear material, Proceedings of .the 19th Annual Symposium on Safeguards and Nuclear Material Management, Le Corum, Montpelier, ESARDA European Safeguards R&D Association, France, 13–15 May, 1997, p. 411.