ZnSe:Sb/ZnSe:Cl heteroepitaxial LED grown by MOVPE

Journal of Crystal Growth

Volumn 214, Issue , 2000, Pages 1163-1165

  Kalisch, H ^a   Hamadeh, H ^a   Ruland R ^a   Berntgen, J ^a   Krysa, A ^b   Heuken, M ^a,c  

^a RWTH AACHEN UNIVERSITY   (Germany)

^b LEBEDEV PHYSICAL INSTITUTE   (Russian Federation)

^c AIXTRON AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIMONY; CHLORINE; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONDUCTIVITY; ELECTROLUMINESCENCE; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING ZINC COMPOUNDS; SUBSTRATES; TEMPERATURE; ZINC;

BLUE EMITTING DEVICES; DIODE STRUCTURES; TRISDIMETHYLAMINOANTIMONY;

LIGHT EMITTING DIODES;

EID: 0033705743     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(00)00297-9     Document Type: Article

References (1)

1. H. Kalisch, H. Hamadeh, R. Rüland, A.L. Gurskii, I. Marko, G.P. Yablonskii, M. Heuken, Proceedings of the Second International Symposium on Blue Laser and Light Emitting Diodes, 29 September–2 October, Chiba, Japan, 1998, p. 138.