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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 5 A, 2000, Pages 2530-2535

Correlation of nanostructural heterogeneity and light induced degradation in a-Si:H solar cells

(4) Das, Ujjwal Kumar a,c Rath, Jatindra Kumar a Williamson, Don L b Chaudhuri, Partha a

a DEPARTMENT OF MATERIALS SCIENCE (India)

b Department of Geology and Geological Engineering (United States)

c JT RES CENTER FOR ATOM TECHNOLOGY (Japan)

Author keywords

A Si:H; Ar dilution; Light induced degradation; Nanostructural heterogeneity; PECVD; Solar cells

Indexed keywords

AMORPHOUS SILICON; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELECTRONIC DENSITY OF STATES; ION BOMBARDMENT; NANOSTRUCTURED MATERIALS; PHOTOCONDUCTIVITY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RADIATION DAMAGE; SEMICONDUCTING SILICON; X RAY SCATTERING;

LIGHT INDUCED DEGRADATION;

SILICON SOLAR CELLS;

EID: 0033704816 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.39.2530 Document Type: Article

Times cited : (18)

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