Growth of high-quality single crystal of 30 at% Yb:YAG and its laser performance

Journal of Crystal Growth

Volumn 216, Issue 1, 2000, Pages 348-351

  Yang, Peizhi ^a   Deng, Peizhen ^b   Xu, Jun ^b   Yin, Zhiwen ^a  

^a SHANGHAI INSTITUTE OF CERAMICS   (China)

^b SHANGHAI INSTITUTE OF OPTICS AND FINE MECHANICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION; ANNEALING; CRYSTAL DEFECTS; CRYSTAL GROWTH FROM MELT; DOPING (ADDITIVES); SINGLE CRYSTALS; YTTERBIUM;

YTTERBIUM LASER;

SOLID STATE LASERS;

EID: 0033704028     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(00)00418-8     Document Type: Article

References (7)

1. Lacovara P., Choi H.K., Wang C.A., Aggarwal R.L., Fan T.Y. Opt. Lett. 16:1991;1089.
2. Fan T.Y. IEEE J. Quantum Electron. 29:1993;1457.
3. Giesen A., Hügel H., Voss A. Appl. Phys. B. 58:1994;365.
4. Bibeau C., Beach R.J., Mitchell S.C.et al. IEEE J. Quantum. Electron. 34:1998;2010.
5. Reinberg A.R., Riseberg L.A., Brown R.M.et al. Appl. Phys. Lett. 19:1971;11.
6. Yin H.B., Deng P.Z., Gan F.X. J. Appl. Phys. 83:1998;3825.
7. Yang P.Z., Deng P.Z., Xu J.et al. Acta Opt. Sinica. 19:1999;132. (in Chinese).