GaN surface ablation by fs-pulses: atomic force microscopy studies, accumulation effects

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4065, Issue , 2000, Pages 546-556

  Eliseev, Petr G ^a   Juodkazis, Saulius ^a   Sugahara, Tamoya ^a   Sun, Hong Bo ^a   Matsuo, Shigeki ^a   Sakai, Shiro ^a   Misawa, Hiroaki ^a  

^a UNIVERSITY OF NEW MEXICO   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL DEFECTS; EPITAXIAL GROWTH; LASER DAMAGE; LASER PULSES; MORPHOLOGY; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM COMPOUNDS; SURFACES;

ACCUMULATION EFFECT; FEMTOSECOND PULSES; GALLIUM NITRIDE; PHOTOLUMINESCENCE OF DEFECTS;

LASER ABLATION;

EID: 0033701890     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.407377     Document Type: Conference Paper

References (24)