Scaling guideline of DRAM memory cells for maintaining the retention time

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2000, Pages 84-85

  Ueno, Shuichi ^a   Inoue, Yasuo ^a   Inuishi, Masahide ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENT CONTROL; LEAKAGE CURRENTS; SEMICONDUCTOR DEVICE MODELS; TEMPERATURE DISTRIBUTION;

RETENTION TIME;

DYNAMIC RANDOM ACCESS STORAGE;

EID: 0033701272     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)