0.99-μm2 loadless four-transistor SRAM cell in 0.13-μm generation CMOS technology

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2000, Pages 164-165

  Masuoka, S ^a   Noda, K ^a   Ito, S ^a   Matsui, K ^a   Imai, K ^a   Yasuzato, N ^a   Kawamoto, H ^a   Ikezawa, N ^a   Ando, K ^a   Koyama, S ^a   Tamura, T ^a   Yamada, Y ^a   Horiuchi, T ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EXCIMER LASERS; GAS LASERS; LEAKAGE CURRENTS; LSI CIRCUITS; RANDOM ACCESS STORAGE;

STATIC RANDOM ACCESS MEMORY (SRAM);

CMOS INTEGRATED CIRCUITS;

EID: 0033701264     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)