Experimental results of a dc glow discharge source with controlled plasma floating potential for plasma immersion ion implantation

Journal of Physics D: Applied Physics

Volumn 33, Issue 13, 2000, Pages 1592-1595

  Berni, L A ^a   Ueda, M ^a   Gomes, G F ^a   Beloto, A F ^a   Reuther, H ^b  

^a INSTITUTO NACIONAL DE PESQUISAS ESPACIAIS   (Brazil)

^b INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC POTENTIAL; GLOW DISCHARGES; ION BOMBARDMENT; ION IMPLANTATION; NITROGEN; PLASMA ETCHING; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING;

PLASMA IMMERSION ION IMPLANTATION;

PLASMA SOURCES;

EID: 0033700811     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/33/13/306     Document Type: Article

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