Irradiation effects of 1 MeV electrons and 50 MeV heavy ions on p-n junction silicon diodes and n-/p-channel power MOSFETs

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3975, Issue , 2000, Pages

  Shinde, N S ^a   Sathyavathi, P ^a   Dhole, S D ^a   Bhoraskar, V N ^a  

^a UNIVERSITY OF PUNE   (India)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; COMPOSITION EFFECTS; DOPING (ADDITIVES); ELECTRON IRRADIATION; ENERGY ABSORPTION; HEAVY IONS; ION BOMBARDMENT; MOSFET DEVICES; SEMICONDUCTING SILICON; SEMICONDUCTOR DIODES; SEMICONDUCTOR JUNCTIONS; THRESHOLD VOLTAGE;

VOLTAGE DROP;

RADIATION EFFECTS;

EID: 0033700510     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)