Characterization of source-to-drain capacitance(Cds) effect of GaAs PHEMT for microwave and millimeter-wave switch

IEEE MTT-S International Microwave Symposium Digest

Volumn 1, Issue , 2000, Pages 173-176

  Chung, Younkyu ^a   Ryu, Gi Hyon ^a   Kim, Dae Hyun ^a   Lee, Jae Hak ^a   Hong, Woo Yeon ^a   Seo, Kwang Seo,k ^a  

^a Seoul National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL RESISTANCE; PSEUDOMORPHIC HIGH ELECTRON MOBILITY TRANSISTOR; SINGLE POLE SINGLE THROW MONOLITHIC SWITCH; SOURCE TO DRAIN CAPACITANCE; SWITCHING DEVICE;

CAPACITANCE; ELECTRIC IMPEDANCE; ELECTRIC POWER SUPPLIES TO APPARATUS; ELECTRON BEAM LITHOGRAPHY; EQUIVALENT CIRCUITS; HETEROJUNCTIONS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; SWITCHING CIRCUITS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0033693527     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (7)

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