Small signal ac-surface photovoltage technique for non-contact monitoring of near surface doping and recombination-generation in the depletion layer

Materials Research Society Symposium - Proceedings

Volumn 591, Issue , 2000, Pages 225-230

  Marinskiy, D ^a   Lagowski, J ^a   Wilson, M ^a   Savtchouk, A ^a   Jastrzebski, L ^b   DeBusk, D ^c  

^a Semiconductor Diagnostics Inc   (United States)

^b UNIVERSITY OF SOUTH FLORIDA   (United States)

^c Cirent Semiconductor   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; ELECTRODES; INTEGRATED CIRCUIT MANUFACTURE; INTERFACES (MATERIALS); MONITORING; NONDESTRUCTIVE EXAMINATION; SEMICONDUCTOR DOPING; SURFACE TREATMENT;

NEAR SURFACE DOPING; SURFACE PHOTOVOLTAGE;

SILICON WAFERS;

EID: 0033692204     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)

1. R. Nakhmanson, Solid State Electron. 18, p. 617 (1975).
2. E. Kamieniecki, J.Vac.Sci.Technol., 20, p. 811 (1981).
3. C. Munakata and S. Nishimatsu, Japan. J. Appl. Phys. 25, p. 807 (1986).
4. E.H. Nicollian and J.R. Brews MOS Physics and Technology, (Wiley, New York, 1982) Ch.4, 5.
5. S.M. Sze Physics of Semiconductor Devices, 2d ed. (Wiley, New York, 1981 ) p. 248.
6. M. Wilson, J. Lagowski, A. Savtchouk, L. Jastrebski and J. D'Amico, to be published in ASTM Conference on Gate Dielectric Oxide Integrity, 1999.
7. D. DeBusk, A. Hoff, Solid State Technology, 42, April, 1999.
8. P. Roman, D. Hwang, K. Torek, J. Ruzyllo, and E. Kamieniecki, Mat. Res. Soc. Symp. Proc. 386, p. 401 (1995).
9. D. Marinskiy, M. Wilson, Unpublished results.