Spike anneals for ultra-low energy

European Semiconductor

Volumn 22, Issue 7, 2000, Pages

  Al Bayati, Amir ^a   Mayur, Abhilash ^a   Murrell, Adrian ^a   Collart, Eric ^a   Ramamurthy, Sundar ^a   Achutharaman, Raman ^a  

^a APPLIED MATERIALS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHIZATION; CMOS INTEGRATED CIRCUITS; DIFFUSION IN SOLIDS; ELECTRIC RESISTANCE MEASUREMENT; ION IMPLANTATION; LEAKAGE CURRENTS; RAPID THERMAL ANNEALING; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING BORON; SEMICONDUCTOR JUNCTIONS; SILICON WAFERS;

PRE-AMORPHIZATION IMPLANTS (PAI); SPIKE ANNEALS; TRANSIENT ENHANCED DIFFUSION (TED);

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0033691853     PISSN: 02656027     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (0)