Josephson junction array type I-V characteristics of quench-condensed ultra thin films of Bi

Solid State Communications

Volumn 115, Issue 8, 2000, Pages 427-432

  Sambandamurthy, G ^a   Dasgupta, K ^a   Moorthy, V H S ^a   Chandrasekhar, N ^a  

^a INDIAN INSTITUTE OF SCIENCE   (India)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BISMUTH; CRITICAL CURRENT DENSITY (SUPERCONDUCTIVITY); CURRENT VOLTAGE CHARACTERISTICS; HYSTERESIS; JOSEPHSON JUNCTION DEVICES; QUENCHING; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SAPPHIRE; SINGLE CRYSTALS; SUBSTRATES; ULTRATHIN FILMS;

RESISTIVELY AND CAPACITIVELY SHUNTED JUNCTION (RCSJ) MODEL;

SUPERCONDUCTING FILMS;

EID: 0033691121     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(00)00212-X     Document Type: Article

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