Raman study on residual strains in thin 3C-SiC epitaxial layers grown on Si(001)

Thin Solid Films

Volumn 368, Issue 2, 2000, Pages 307-311

  Zhu, Jianjun ^a   Liu, Suying ^a   Liang, Junwu ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; EPITAXIAL GROWTH; LATTICE CONSTANTS; PHONONS; RAMAN SCATTERING; SEMICONDUCTING SILICON; SILICON CARBIDE; STRAIN; STRESS ANALYSIS; THICKNESS MEASUREMENT;

EPITAXIAL LAYERS; RAMAN SCATTERING MEASUREMENT; RESIDUAL STRAIN;

THIN FILMS;

EID: 0033690992     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(00)00789-6     Document Type: Article

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