Heteroepitaxy of CdTe(111)B on Si(111):As

Journal of Crystal Growth

Volumn 214, Issue , 2000, Pages 1-4

  Schick, H ^a   Bensing, F ^a   Hilpert, U ^b   Richter, U ^c   Hansen, L ^a   Wagner, J ^a   Wagner, V ^a   Geurts, J ^a   Waag, A ^a   Landwehr, G ^a  

^a UNIVERSITY OF WÜRZBURG   (Germany)

^b MARTIN LUTHER UNIVERSITY HALLE WITTENBERG   (Germany)

^c Labor Elektronenmikroskopie N   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; FILM GROWTH; MOLECULAR ORIENTATION; PHOTOLUMINESCENCE; RAMAN SPECTROSCOPY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING CADMIUM TELLURIDE; SEMICONDUCTING SILICON; SURFACES; TRANSMISSION ELECTRON MICROSCOPY; TWINNING; X RAY DIFFRACTION ANALYSIS;

BUFFER LAYERS; CADMIUM TELLURIDE; GROWTH MECHANISMS; HETEROEPITAXY; SECONDARY ELECTRON MICROSCOPY; TWIN SUPPRESSION;

MOLECULAR BEAM EPITAXY;

EID: 0033690215     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(00)00037-3     Document Type: Article

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