Optimum atomic spacing for AlAs etching in GaAs epitaxial lift-off technology

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 39, Issue 5 B, 2000, Pages

  Koteswara Rao, Kota S R ^a   Katayama, Takeshi ^a,b   Yokoyama, Shin ^a   Hirose, Masataka ^a  

^a HIROSHIMA UNIVERSITY   (Japan)

^b INDIAN INSTITUTE OF SCIENCE   (India)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION IN SOLIDS; EPITAXIAL GROWTH; ETCHING; HETEROJUNCTIONS; HYDROFLUORIC ACID; QUENCHING; REACTION KINETICS; SEMICONDUCTING ALUMINUM COMPOUNDS; SOLUTIONS;

ALUMINUM ARSENIDE; ATOMIC SPACING; EPITAXIAL LIFT-OFF (ELO);

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0033690087     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.l457     Document Type: Article

References (11)