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Volumn 51, Issue , 2000, Pages 151-156
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Theoretical calculation of cathodoluminescence intensity in GaAs influence of surface defects density (Nt) and concentration (Na)
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Author keywords
[No Author keywords available]
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Indexed keywords
CARRIER CONCENTRATION;
CATHODOLUMINESCENCE;
CRYSTAL DEFECTS;
ELECTRIC VARIABLES MEASUREMENT;
ELECTRON BEAMS;
MATHEMATICAL MODELS;
NUMERICAL METHODS;
OPTICAL VARIABLES MEASUREMENT;
ACCEPTORS CONCENTRATION;
CATHODIC EXCITATION;
SHOCKLEY-READ-HALL FRAMEWORK;
SURFACE DEFECTS DENSITY;
SEMICONDUCTING GALLIUM ARSENIDE;
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EID: 0033689975
PISSN: 01679317
EISSN: None
Source Type: Journal
DOI: 10.1016/S0167-9317(99)00464-5 Document Type: Article |
Times cited : (8)
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References (10)
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