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Volumn 51, Issue , 2000, Pages 151-156

Theoretical calculation of cathodoluminescence intensity in GaAs influence of surface defects density (Nt) and concentration (Na)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CATHODOLUMINESCENCE; CRYSTAL DEFECTS; ELECTRIC VARIABLES MEASUREMENT; ELECTRON BEAMS; MATHEMATICAL MODELS; NUMERICAL METHODS; OPTICAL VARIABLES MEASUREMENT;

EID: 0033689975     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(99)00464-5     Document Type: Article
Times cited : (8)

References (10)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.