Simple circuit synthesis method for microwave class-F ultra-high-efficiency amplifiers with reactance-compensation circuits

Solid-State Electronics

Volumn 44, Issue 8, 2000, Pages 1477-1482

  Honjo, Kazuhiko ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC NETWORK SYNTHESIS; HETEROJUNCTION BIPOLAR TRANSISTORS;

POWER ADDED EFFICIENCY (PAE); REACTANCE-COMPENSATION CIRCUITS;

MICROWAVE AMPLIFIERS;

EID: 0033689777     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(00)00061-7     Document Type: Article

References (8)

1. Raab F.H. Idealized operation of the class E tuned power amplifier. IEEE Trans CAS. 24:1977;725-735.
2. Raab F.H. Class-F power amplifiers with maximally flat waveforms. IEEE Trans MTT. 45(11):1997;2007-2012.
3. Maeda M., Masato H., Takehara H., Nakamura M., Morimoto S., Fujimoto H., Ota Y., Ishikawa O. Source second-harmonic control for high efficiency power amplifiers. IEEE Trans MTT. 43(12):1995;2952-2958.
4. Hall LC, Trew RJ. Maximum efficiency tuning of microwave amplifiers. IEEE MTT-S Int Microwave Symp, Dig, 1991. p. 123-6.
5. White PM. Effect of input harmonic terminations on high efficiency class-B and class-F operation of PHEMT devices. IEEE MTT-S, IMS, Dig, 1998. p. 1611-4.
6. Honjo K. Applications of HBTs. Int J Solid-State Electron. 38(9):1995;1569-1573.
7. Shimawaki H., Amamiya Y., Furuhata N., Honjo K. High fmax AlGaAs/InGaAs and AlGaAs/GaAs HBT's with p+/p regrown contact. IEEE Trans ED. 42(10):1995;1735-1744.
8. Tanaka S., Amamiya Y., Murakami S., Shimawaki H., Goto N., Takayama Y., Honjo K. Design considerations for millimeter-wave power HBTs based on gain performance analysis. IEEE Trans ED. 45(1):1998;36-44.