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Volumn 558, Issue , 2000, Pages 135-140
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Why SiNx:H is the preferred gate dielectric for amorphous Si thin film transistors (TFTs) and SiO2 is the preferred gate dielectric for polycrystalline Si TFTs
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Author keywords
[No Author keywords available]
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Indexed keywords
AMORPHOUS SILICON;
CONSTRAINT THEORY;
DIELECTRIC MATERIALS;
GATES (TRANSISTOR);
HYDROGENATION;
INTERFACES (MATERIALS);
OPTIMIZATION;
POLYCRYSTALLINE MATERIALS;
SILICA;
THIN FILM TRANSISTORS;
AMORPHOUS SILICON THIN FILM TRANSISTORS;
CONSTRAINING EFFECTS;
DIELECTRIC INTERFACES;
GATE DIELECTRIC;
NETWORK BONDING FORCES;
SEMICONDUCTING SILICON COMPOUNDS;
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EID: 0033689573
PISSN: 02729172
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
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Times cited : (5)
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References (20)
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