C-SiC-Si gradient films formed on silicon by ion beam assisted deposition at room temperature

Surface and Coatings Technology

Volumn 128-129, Issue 1, 2000, Pages 274-279

  Volz, K ^a   Kiuchi, M ^b   Okumura, M ^b   Ensinger, W ^a  

^a PHILIPPS UNIVERSITY MARBURG   (Germany)

^b OSAKA NATIONAL RESEARCH INSTITUTE   (Japan)

Author keywords

Amorphons carbon; Gradient films; Ion beam assisted deposition; Silicon carbide

Indexed keywords

AMORPHOUS MATERIALS; CHEMICAL BONDS; FILM GROWTH; ION BOMBARDMENT; RAMAN SPECTROSCOPY; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON CARBIDE; X RAY PHOTOELECTRON SPECTROSCOPY;

GRADIENT FILMS; ION BEAM ASSISTED DEPOSITION;

PROTECTIVE COATINGS;

EID: 0033688601     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0257-8972(00)00604-6     Document Type: Article

References (9)

1. F.A. Smidt, Int. Mater. Rev. 35 (2) (1990) 6.
2. W. Ensinger, A. Schröer, Surf. Coat. Technol. 103-104 (1998) 168.
3. J.P. Rivière, M. Zaytouni, J. Delafond, Surf. Coat. Technol. 84 (1996) 376.
4. T. Kimura, Y. Tatebe, A. Kawamura, S. Yugo, Y. Adachi, J. Appl. Phys. 24 (12) (1985) 1712.
5. J.P. Rivière, M. Zayatouni, M.F. Denanot, J. Allain, Mater. Sci. Eng. B29 (1995) 105.
6. T. Sato, K. Ohata, N. Asahi et al., Nucl. Instrum. Methods Phys. Res. B 19-20 (1987) 644.
7. L.R. Doolittle, Nucl. Instrum. Methods Phys. Res. B 9 (1985) 344.
8. C.D. Wagner, W.M. Riggs, L.E. Davis, J.F. Moulder, G.E. Muilenberg, Handbook of X-Ray Photoelectron Spectroscopy; Perkin-Elmer Corporation, Physical Electronics Division; Eden Prairie, MN, USA, 1979.
9. J.E. Smith Jr., M.H. Brodsky, B.L. Crowder, M.I. Nathan, J. Non-Cryst. Solids 8-10 (1972) 179.