Room-temperature 340 nm ultraviolet electroluminescence from ZnS-based light-emitting diodes

Journal of Crystal Growth

Volumn 214, Issue , 2000, Pages 1091-1095

  Nakamura, Seiji ^a   Yamada, Yoichi ^a   Taguchi, Tsunemasa ^a  

^a YAMAGUCHI UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELDS; ELECTROLUMINESCENCE; ELECTRONS; IMPACT IONIZATION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING ZINC COMPOUNDS; SUBSTRATES; THERMAL EFFECTS; ULTRAVIOLET RADIATION;

SEMICONDUCTING ZINC SULFIDE; ULTRAVIOLET LIGHT EMITTING DIODES;

LIGHT EMITTING DIODES;

EID: 0033688223     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(00)00280-3     Document Type: Article

References (10)

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