Time-resolved photoluminescence of ZnCdSe single quantum dots

Journal of Crystal Growth

Volumn 214, Issue , 2000, Pages 765-769

  Zhang, B P ^a   Li, Y Q ^a   Yasuda, T ^b   Segawa, Y ^a   Edamatsu, K ^c   Itoh, T ^c  

^a INST OF PHYS AND CHEMICAL RESEARCH   (Japan)

^b ISHINOMAKI SENSHU UNIVERSITY   (Japan)

^c OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CARRIER MOBILITY; ELECTRONS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; SUBSTRATES;

ELECTRON HOLE SEPARATION; TIME RESOLVED PHOTOLUMINESCENCE; ZINC CADMIUM SELENIDE QUANTUM DOTS; ZINC SELENIDE BARRIER;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0033688020     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(00)00222-0     Document Type: Article

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