High temperature cracking of tungsten polycide films on quartz substrate

Thin Solid Films

Volumn 370, Issue 1, 2000, Pages 307-310

  Lee, Jaegab ^a   Oh, Sang Hun ^b   Lee, Jongmu ^c   Lee, Eungu ^d   Lim, Ingon ^e   Park, Won Kyu ^b   Kim, Geunho ^b  

^a Kookmin University   (South Korea)

^b LG Display Co Ltd   (South Korea)

^c Inha University   (South Korea)

^d Chosun University   (South Korea)

^e Applied Materials Institute for BIN Convergence   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; ANNEALING; CRACK INITIATION; CRACK PROPAGATION; CRYSTALLIZATION; INTERFACES (MATERIALS); SURFACE ROUGHNESS; TENSILE STRESS; THERMAL EXPANSION; THERMAL STRESS; TRANSMISSION ELECTRON MICROSCOPY; TUNGSTEN COMPOUNDS;

HIGH TEMPERATURE CRACKING; INTERFACIAL ROUGHNESS; POLYCRYSTALLINE SILICON; TUNGSTEN POLYCIDE FILM; TUNGSTEN SILICIDE;

THIN FILMS;

EID: 0033687670     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(00)00936-6     Document Type: Article

References (10)

1. Fukushima Y., Ueda T., Komiya H. Extended Abstracts of the 1993 International Conference on Solid State Devices and Materials, Chiba, Japan, August 29-September 1. 1993;993.
2. Kobayashi M., Nakazono T., Mori K., et al. Digest. San Jose, CA, June. 14-16:1994;75.
3. Ikeda S., Hagiwara Y., Miura H., Ohta H. Tech. Dig., San Francisco, CA. 1996;77.
4. Jain V., Pramanik D. Proceedings of the Seven International VMIC. June. 12-13:1990;261.
5. Shores D.A. Electrochem. Soc. Interface. 6:(1):1997;42.
6. Townsend P.H., Fulks R.T., Plass H.A.V., Ho J. Wittmer M., Stimmell J., Strathman M. MRS Symp. Proc. 1986;395 San Francisco, CA, 71.
7. Ohring M. The Materials Science of Thin Films. 1992;Academic Press, San Diego, CA.
8. Maex K., Rossum M.V. Properties of metal silicides, in: EMIS (Electronic Materials Information Service) Datareviews series. No. 14:1995;24 INSPEC, London.
9. Kottke M., Pintchovski F., White T.R., Tobin P.J. J. Appl. Phys. 60:1986;2835.
10. Davidge R.W., Green T.J. J. Mater. Sci. 3:1968;629.