Preparation of nanosized silicon by laser-induced chemical vapour deposition

Thin Solid Films

Volumn 368, Issue 2, 2000, Pages 315-318

  Zhang, Haiyan ^a,b   Wei, Aixiang ^c   Liu, Songhao ^a   Wang, Weixiang ^a   Chen, Dihu ^d   Liang, Lizheng ^b   Chen, Kexin ^a  

^a China Normal University   (China)

^b GUANGDONG UNIVERSITY OF TECHNOLOGY   (China)

^c Guangzhou Naval Academy   (China)

^d SUN YAT SEN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; INFRARED SPECTROSCOPY; NANOSTRUCTURED MATERIALS; PARTICLE SIZE ANALYSIS; POWDER METALS; SYNTHESIS (CHEMICAL);

INFRARED ABSORPTION BANDS; LASER INDUCED CHEMICAL VAPOUR DEPOSITION; NANOSIZED SILICON;

SEMICONDUCTING SILICON;

EID: 0033687503     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(00)00791-4     Document Type: Article

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