Reduction of electromigration in aluminum films by copper doping

IBM Journal of Research and Development

Volumn 44, Issue 1, 2000, Pages 89-91

  Ames, Irving ^a   D'Heurle, Francois M ^a   Horstmann, Richard E ^a,b  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b FAIRLEIGH DICKINSON UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; COPPER; DOPING (ADDITIVES); ELECTROMIGRATION;

ACCELERATED LIFE TESTING;

METALLIC FILMS;

EID: 0033687078     PISSN: 00188646     EISSN: None     Source Type: Journal    
DOI: 10.1147/rd.441.0089     Document Type: Article

References (6)

1. See, for example, I. A. Blech and E. S. Meieran, J. Appl. Phys. 40, 485 (1969) and the references cited in this paper.
2. R. V. Penney, J. Phys. Chem. Solids 25, 335 (1964).
3. I. Ames, J. Hoekstra and G. Folchi, to be published.
4. I. Ames, L. Kaplan and P. Roland, Rev. Sci. Instr. 37, 1737 (1966).
5. F. d'Heurle, L. Berenbaum and R. Rosenberg, Trans. Met. Soc. A.I.M.E. 242, 502 (1968).
6. D. S. Chhabra and N. G. Ainslie, IBM Components Division Laboratory, East Fishkill, New York, private communication.