Molecular beam epitaxial growth of HgCdTe on CdZnTe(311)B

Journal of Electronic Materials

Volumn 29, Issue 6, 2000, Pages 727-728

  Aqariden, F ^a   Shih, H D ^a   Turner, A M ^a   Chandra, D ^a   Liao, P K ^a  

^a DRS Sensors and Targeting Systems Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ETCHING; FILM GROWTH; HALL EFFECT; INDIUM; MERCURY COMPOUNDS; MOLECULAR BEAM EPITAXY; MORPHOLOGY; OPTICAL MICROSCOPY; SEMICONDUCTING CADMIUM TELLURIDE; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH;

CADMIUM ZINC TELLURIDE; HETEROEPITAXY; MERCURY CADMIUM TELLURIDE;

SEMICONDUCTING FILMS;

EID: 0033686790     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-000-0214-1     Document Type: Article

References (6)

1. R.J. Koestner and H.F. Schaake, Mater. Res. Soc. Symp. Proc. 90, 311 (1987); R.J. Koestner and H.F. Schaake, J. Vac. Sci. Technol. A6, 2834 (1988).
2. R.J. Koestner and H.F. Schaake, Mater. Res. Soc. Symp. Proc. 90, 311 (1987); R.J. Koestner and H.F. Schaake, J. Vac. Sci. Technol. A6, 2834 (1988).
3. See, for example, P.N. Uppal, J.S. Ahearn, and D.P. Musser, J. Appl. Phys. 62, 3766 (1987).
4. M.A. Herman and H. Sitter, Molecular Beam Epitaxy, Second Edition (Heidelberg, Germany: Springer-Verlag, 1996), pp. 232-240.
5. B.D. Cullity, Elements of X-Ray Diffraction, Second Edition (Reading, PA: Addison-Wesley, 1978), p. 75.
6. H.D. Shih, to be published.