Current-induced voltage noise below the Kosterlitz-Thouless transition

Physica B: Condensed Matter

Volumn 284-288, Issue PART I, 2000, Pages 981-982

  Kokubo, Nobuhito ^a   Mutou, Masaharu ^a   Kamada, Mikio ^a   Okuma, Satoshi ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Amorphous MoxSi1 x films; Kosterlitz Thouless Berezinski transition; Noise

Indexed keywords

AMORPHOUS FILMS; CURRENT VOLTAGE CHARACTERISTICS; MOLYBDENUM COMPOUNDS; PHASE TRANSITIONS; SUPERCONDUCTING TRANSITION TEMPERATURE; THIN FILMS;

KOSTERLITZ-THOULESS-BEREZINSKI TRANSITION;

SUPERCONDUCTING FILMS;

EID: 0033682890     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(99)02313-3     Document Type: Article

References (8)

1. A.M. Kadin, K. Epstein, A.M. Goldman, Phys. Rev. B 27 (1983) 6691.
2. S. Okuma, T. Terashima, N. Kokubo, Solid State Commun. 106 (1998) 529.
3. S. Okuma, T. Terashima, N. Kokubo, Phys. Rev. B. 58 (1998) 2816.
4. S. Okuma, K. Enya, H. Hirai, J. Phys. Soc. Japan 64 (1995) 3397.
5. T.J. Shaw et al., Phys. Rev. Lett. 76 (1996) 2551.
6. R.F. Voss, C.M. Knoedler, P.M. Horn, Phys. Rev. Lett. 45 (1980) 1523.
7. C.M. Knoedler R.F. Voss, Phys. Rev. B 26 (1982) 449.
8. N. Kokubo, T. Terashima, S. Okuma, J. Phys. Soc. Japan 67 (1998) 725.