Post-breakdown conduction in sub-5nm gate oxides in MOS devices

Proceedings of the IEEE International Caracas Conference on Devices, Circuits and Systems, ICCDCS

Volumn , Issue , 2000, Pages

  Miranda, E ^a   Sune, J ^a  

^a UNIVERSIDAD DE BUENOS AIRES   (Argentina)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; ELECTRIC CONDUCTIVITY; ELECTRON TRANSPORT PROPERTIES; GATES (TRANSISTOR); LEAKAGE CURRENTS; SILICA; THIN FILMS;

GATE OXIDES; POST BREAKDOWN CONDUCTION;

MOS DEVICES;

EID: 0033682593     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (12)