Analysis of HBT behavior after strong electrothermal stress

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Volumn , Issue , 2000, Pages 245-248

  Palankovski, V ^a   Selberherr, S ^a   Quay, R ^a   Schultheis, R ^a  

^a VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

AGING OF MATERIALS; CHARGE CARRIERS; COMPUTER SIMULATION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; STRESS ANALYSIS;

ELECTROTHERMAL STRESSES; SEMICONDUCTOR DEVICE RELIABILITY;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0033681263     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (9)